A New Approach to Prevent the Negative Impact of the Metastable Defect in Boron Doped CZ Silicon Solar Cells

摘要

A new reaction model concerning the boron-oxygen related degradation is presented, introducing a third recombination inactive state, that stabilizes the electrical parameters of Cz-Si solar cells, and the transition to this new inactive state is proven by experimental data. Furthermore, the stability under solar cell working conditions and the formation kinetics of this additional state are discussed