Solutions for improved dynamic ruggedness of high voltage freewheeling diodes

摘要

The dynamic ruggedness is one of the key requirements for high voltage freewheeling diodes. To improve the dynamic ruggedness of the power diodes,many innovations have been practiced in the past. In this paper solutions such as axial carrier lifetime profile,control of the p emitter efficiency and diodes with gaussian buffer structures are evaluated with numerical isothermal simulation for a 3.3kV design in respect to their influence on the static and dynamic behaviour as well as the dynamic ruggedness.Requirements for a new solution are derived.