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Effects of Processing and Doping Elements on the Grain Boundary Microstructure and Mechanical Properties of SiC

机译:加工和掺杂元件对SiC晶界微观结构和力学性能的影响

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Doping as well as processing methodology exhibited pronounced effect on microstructure and grain boundary character of SiC. Higher frequency of special boundaries, formation of α phase and extensive grain growth were observed in the Spark plasma sintering (SPS) samples as compared to the hot-pressed (HP) samples. Al doping further enhanced the frequency of special boundaries. An exaggerated grain growth was noticed with Mg doping. Finally, the hardness values measured on different SiC materials were related to the grain size as well as the grain boundary character.
机译:掺杂以及加工方法表现出对SiC微观结构和晶界特征的显着作用。与热压(HP)样品相比,在火花血浆烧结(SPS)样品中观察到较高的特殊边界,形成α相和广泛的晶粒生长。 Al掺杂进一步增强了特殊边界的频率。用mg掺杂注意到夸张的谷物生长。最后,在不同SiC材料上测量的硬度值与晶粒尺寸以及晶界特征有关。

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