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Characterization of Directionally Solidified B_4C-TiB_2 and B_4C-SiC Eutectic Composites Prepared by Floating-Zone Method

机译:浮区法制备定向凝固的B_4C-TIB_2和B_4C-SIC共晶复合材料的表征

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B_4C-TiB_2 and B_4C-SiC eutectic composites were prepared by a floating zone method to modify the properties of B_4C. The B_4C-TiB_2 composites consisted of B4C matrix and rod-shaped TiB_2 where the eutectic composition was 25 mol percent TiB_2. The c-axis of B_4C matrix tilted ~20 deg from the growth direction. Twin boundaries were observed in the B_4C matrix being parallel to the growth direction and (1011) plane of B_4C. The (1011) plane of B_4C was parallel to the (0001) plane of TiB_2. The B-4C-SJC composite has a lamella structure with SiC and B_4C layers, whose eutectic composition was 53 mol percent SiC. The angle between c-axis of B_4C matrix and growth direction was about 20 deg. Twin boundaries were observed parallel to the growth direction and (111) plane of the SiC layer. The (1012) plane of B_4C was parallel to the (311) plane of SiC.
机译:通过浮区法制备B_4C-TIB_2和B_4C-SIC共晶复合材料以改变B_4C的性质。 B_4C-TIB_2复合材料由B4C基质和棒状TIB_2组成,其中共晶组合物为25mol%TIB_2。 B_4C矩阵的C轴从生长方向倾斜〜20°。在B_4C矩阵中观察到双界限平行于B_4C的生长方向和(1011)平面。 B_4C的(1011)平面平行于TIB_2的(0001)平面。 B-4C-SJC复合材料具有薄片结构,具有SiC和B_4C层,其共晶组合物为53摩尔%SiC。 B_4C矩阵和生长方向的C轴之间的角度约为20℃。与SiC层的生长方向和(111)平面平行观察到双界限。 B_4c的(1012)平面平行于SiC的(311)平面。

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