The Si FEA(field emitter array) was fabricated on the n-type, low resistance (5 ohm-cm) Si(100) wafer through anisotropic etching with dipping in 40 wt.% KOH solution[1]. To increase the thermo-chemical durability of tip, long term stability, and current density, Ti(300nm) film was deposited with electron beam evaporation and the silicide was formed by annealing at 650°[2]. The C54-TiSi2 phase of the sample was formed using XRD analysis. The emission characteristics of the Ti-silicide FEA were compared with those of Si FEA under high vacuum condition of about 10-7Torr. The turn-on voltage of Ti-silicide FEA is about 1500 V. On the other hand, the turn-on voltage of Si FEA is found to be 1,950 V. In addition, the emission stability of the Ti-silicide FEA showed much better than that of Si FEA.
展开▼
