Post-Process CMOS Front End Engineering With Focused Ion Beams

摘要

For the first time we demonstrate the capability of focused ion beams for engineering in the front end regime. We have shown that by a robust protection for MOSFET, Focused ion beam induced ESD degradation can be avoided and implantation induced damage could be well controlled and mitigated by a moderate RTA process. By a masked through gate implantation technique followed by a moderate annealing/activation process we have exemplarily modified the threshold voltage of test transistors on fully featured wafers whereby any unintentional change of devices nearby could be avoided.