Interaction of the thermocapillary, thermal and forced convection in the Czochralski-configuration of the silicon crystal growth

摘要

There are three separate systems of thermal and kinematic circuits with the Czochralski crystal growth method: wall heating, rotating and pulling of the melt as well as rotating and pulling of the growing crystal. However, the movement of the crucible with the melt and the crystal itself can be defined as a fourth and fifth system where the heat is discharged. All these conditions cause a very complicated flow that has a big influence on the homogeneity of the growing crystal. It is a great challenge to investigate this flow and to try to determine its influence on the whole process.