UV IRRADIATION EFFECTS IN C_(60) THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS

摘要

Thin films of fullerene C_(60) were deposited by Molecular Beam Epitaxy (MBE) method. These films coated on glass and Si substrates were subjected to the UV laser of 248 nm for different timings. The structural and electrical properties of the films due to the laser exposure have been characterized. Morphology of the films after the laser exposure shows the variation in the contrast of the films that could be due to the difference in the optical absorption coefficient of the laser exposed films. The results have revealed the reduction in the electrical resistance of the films and the structural transformation from the crystalline fullerene to amorphous carbon phase during laser irradiation. Based on the above results, an attempt has been carried out on these irradiated C_(60) films to make a device sandwiched with n ― type Si and the photovoltaic parameters are reported.