Effect of ion irradiation on C_(60) thin films Ion-irradiation-induced resistance to photopolymerization

摘要

We report a new effect of ion irradiation on C_(60) thin films: C_(60) thin films irradiated with 7-MeV C~(2+) ions show resistance to photopolymerization. The resistance increases with increasing ion fluence of irradiation. The effect is qualitatively explained by the fact that the number of a C_(60) pair satisfying the topochemical requirement for photochemical reaction in solids decreases by destruction of C_(60) molecules accompanied by lattice disorder.