R_(SC)I_(SC)-product in p-i-n solar cells: A new method for testing the transport quality of the intrinsic layer

摘要

The internal collection efficiency (χ) of amorphous silicon p-i-n solar cells depends on the applied voltage. This can be confirmed by plotting the short-circuit resistance (R_(SC)) as a function of the short-circuit current (I_(SC)). From this result the measurement of the R_(SC)I_(SC)-product has been used to determine the transport quality of the intrinsic layer (e.g. the μτ-product [1]). In this work, in order to measure the R_(SC)I_(SC)-Product (linked to χ), a new experimental technique is proposed. This technique is based on the modulation of the two excitations (light and voltage) applied to the cell. By this method, accurate measurements of the R_(SC)I_(SC)-product can be performed even when this magnitude is obscured by parasitic limitations.