Study of power balance in asymmetric capacitively coupled discharge plasmas used for material processing

摘要

A recently introduced model considering power balance in a capacitively coupled asymmetric RF-driven discharge plasma reactor is analyzed. The model is used to determine fractions of RF power deposited in a bulk plasma and sheaths. It has been applied to study etching conditions of various materials (silicon, tungsten, organic polymer) in fluorine or oxygen containing plasmas. Experimental results are compared with the predictions of the model.