首页> 外文会议>International Corrosion Congress >KINETICS OF PURE ALUMINIUM DISSOLUTION IN H_3PO_4 AQUEOUS SOLUTIONS CONTAINING DIFFERENT AGGRESSIVE ANIONS AND ORGANIC INHIBITORS
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KINETICS OF PURE ALUMINIUM DISSOLUTION IN H_3PO_4 AQUEOUS SOLUTIONS CONTAINING DIFFERENT AGGRESSIVE ANIONS AND ORGANIC INHIBITORS

机译:含有不同腐蚀性阴离子和有机抑制剂的H_3PO_4水溶液中纯铝溶解的动力学

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Effects of aggressive anions additives on dissolution of pure aluminium have been investigated in aqueous 1M H_3PO_4 solution as a function of anion concentration using electrochemical impedance spectroscopy (EIS), potentiostatic and potentiodynamic methods. The addition of different aggressive anions (like as Cl~-, Br~-, I~-, SCN~-) lead to in all of the cases to an increase of the corrosion rate. The presence of halide ions creates pitting corrosion in all cases. Characteristic of all systems is that virtually no current flows before some definite potential is reached. The experimental results confirmed that even in solutions containing chloride ions the surface of the metal is covered by an oxide film which changes its properties with current density of anodic dissolution, being the less resistive the higher the current density. Impedance measurements showed a single capacitive loop in the complex plane plots and one maximum in the phase angle Bode plots at high frequencies. Electrochemical measurements showed that, the organic inhibitors, like as dodecyltrimethylammonium bromide, tetradecyltrimethylammonium bromide and hexadecyltrimethylammonium bromide had good inhibiting properties. The best efficiencies appear to be obtained at concentrations around the critical micelle concentration (CMC). The adsorption of the organic inhibitor prevents the adsorption of aggressive anions and the destruction of the aluminium oxide layer.
机译:在使用电化学阻抗谱(EIS),电位和电位动力学方法的阴离子浓度的函数中,在1M H_3PO_4溶液中研究了侵蚀性阴离子添加剂对纯铝溶解的影响。添加不同的侵略性阴离子(如Cl〜 - ,Br〜 - ,I〜 - ,SCN〜 - )导致所有情况导致腐蚀速率的增加。卤化物离子的存在在所有情况下产生点腐蚀。所有系统的特征是在达到一些明确潜力之前几乎没有电流流动。实验结果证实,即使在含有氯离子的溶液中,金属的表面也被氧化膜覆盖,氧化膜通过电流密度地改变其性能,较低的电流密度越高。阻抗测量显示在复杂平面图中的单个电容回路,在高频下的相位角凸点图中的一个最大值。电化学测量表明,有机抑制剂,如作为十二烷基三甲基溴化铵,四淀粉三甲基溴化铵和十六烷基三甲基溴化铵具有良好的抑制性能。最佳效率似乎在临界胶束浓度(CMC)周围以浓度获得。有机抑制剂的吸附可以防止侵蚀性阴离子的吸附和氧化铝层的破坏。

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