首页> 外文会议>International Conference on Microelectronics >Thermal infrared detection using linear arrays of poly SiGe uncooled microbolometers
【24h】

Thermal infrared detection using linear arrays of poly SiGe uncooled microbolometers

机译:热红外检测使用聚光晶阵列的聚光阵列未冷却微孔计

获取原文

摘要

The poly-SiGe technology developed at IMEC [1-3] is transferred into production of uncooled infrared microbolometer arrays of both, 14×14 and 200×1 size at its industrial spin-off XenICs. The production line ensures near 100% pixel yield and operability combined with the best uniformity of microbolometer characteristics and their wafer-scale variations. The SiGe technology affords the unique uniformity of resistance, thermal coefficient of resistance, and 1/f noise. The first images of a bar target have been taken with linear SiGe arrays. A NETD of 100 mK at the readout level is obtained on 200×1 arrays of 60×60μm{sup}2 pixels at the reading speed corresponding to 100 frames per second (fps) and recalculated to 25 fps.
机译:在IMEC [1-3]中开发的Poly-SiGe技术在其工业旋转Xenics下转移到24×14和200×1尺寸的未加工红外微磁性仪阵列中。生产线确保接近100%像素产率和可操作性,与微多升压仪特性的最佳均匀性及其晶片级变化相结合。 SiGe技术提供了抵抗,热量的独特均匀性,电阻系数和1 / f噪声。用线性SiGe阵列拍摄了条形图的第一图像。在读出级别为100 mk的NetD在60×60×60μm{sup} 2像素上以每秒(fps)相对应的读取速度,并重新计算到25 fps。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号