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large enhancement of optical nonlinearity using quantum dots embedded in a photonic crystal structure for all-optical switch applications

机译:使用嵌入到所有光学开关应用的光子晶体结构中的量子点的大量增强光学非线性

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All-optical switches using optical nonlinear (ONL) materials, promising for future OThM/WDM systems, require both ultrafast and low optical-power operations. Symmetric-Mach-Zehnder (SMZ)-type all-optical switches are very attractive because they can operate in ultrafast response time without limitation of the lifetime of the ONL materials. Therefore, the operation power of the SMz switches can be reduced without any response delay when using the materials with larger optical nonlinearity than ever, resulting in simultaneous achievement of the above requirements. For the purpose, we have proposed the use of the saturation absorption of quantum dot (QD) embedded in photonic crystal (PC)-waveguide (WG) as an origin of large optical nonlinearity. In this paper, the design of the operation-power reduction of the SMZ-switch is revealed under a realistic operation condition, based on the measured saturation intensity (Is) in an InAs QD and simple assumptions of power enhancement effect in a PC-WG.
机译:使用光学非线性(ONL)材料的全光开关,承诺未来OTHM / WDM系统,需要超快和低光功率操作。对称Mach-Zehnder(SMZ)-Type全光开关非常有吸引力,因为它们可以在超快响应时间内运行而不限制ONL材料的寿命。因此,当使用具有较大光学非线性的材料时,可以减少SMZ开关的操作功率而没有比以往更大的光学非线性的材料,导致同时实现上述要求。为此目的,我们提出了使用嵌入光子晶体(PC)-WaveGuide(WG)中的量子点(QD)的饱和吸收作为大光学非线性的起源。在本文中,基于INAS QD中的测量饱和强度(IS)和PC-WG中的功率增强效果的简单假设,在实际操作条件下揭示了SMZ-Switch的操作功率降低的设计。 。

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