In situ cleaning of LPCVD furnaces using a thermal NF{sub}3 etch process

摘要

This paper describes an in situ clean process for the ASM A400 (200 mm) and A412 (300 mm) vertical LPCVD batch furnaces. The clean is based upon a thermal NF3 etch process. The furnace is maintained near the deposition temperature (500 to 600 °C) whilst introducing a NF{sub}3/N{sub}2 gas mixture. NF{sub}3 thermally decomposes at these temperatures, generating fluorine atoms that react with the CVD residue.