The study and analysis of the conducted EMI suppression on power MOSFET using passive snubber circuits

摘要

This paper presents the study and analysis of RCD, RLD, and RCD-RLD passive snubber circuits affect to the power losses and the suppression of the conducted EMI emission on the power MOSFET. The paper describes the snubber effects on dv/di during turn-off period, di/dt during turn-on period, over voltage, spike voltage, power loss and the conducted EMI emission. The 100 watts -50 kHz buck converter is used in the simulation and the in experiment. The measured and simulated results of conducted EMI emission are compared to verify the effectiveness of the each snubber circuits.