A novel structure of external cavity semiconductor lasers with suppressed thermally induced wavelength shift and mode hopping

摘要

A novel structure of external cavity semiconductor lasers with suppressed thermally induced wavelength shift and mode hopping is proposed in this paper. The calculation results have shown that the wavelength stability with temperature is dramatically improved and the side mode suppression ratio (SMSR) remains a higher value (>35dB) when temperature change from 20°C to 50°C.