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Numerical modeling of deposition of SiO{sub}2 and GeO{sub}2 in the MCVD process for the manufacture of optical fiber preforms

机译:SIO {SUB} 2和GEO {SUB} 2在光纤预成型件制造的MCVD工艺中的数值模拟

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A numerical simulation of heat and mass transfer during the multicomponent (SiO{sub}2 and GeO{sub}2) modified chemical vapor deposition (MCVD) process with application to the manufacture of optical fiber preforms is performed. The MCVD process is widely used to manufacture glass preforms for high quality optical fiber fabrication. In this process, a silica tube is rotated on a lathe and is heated by a slowly traversing oxy-hydrogen torch. A mixture of gases, such as SiCl{sub}4, GeCl{sub}4 and O{sub}02, flow into the rotating tube and are heated to high temperatures, when SiO{sub}2 and GeO{sub}2 particles are formed and deposited on the tube wall due to thermophoresis. In general, GeO{sub}2 is used as a dopant for increasing the refractive index of the final optical fiber. In this study, the commercial computational fluid dynamics (CFD) package, FLUENT, based on the finite volume method, is used to solve the governing equations for mass, momentum, energy, and species conservation for gases and transport of SiO{sub}2 and GeO{sub}2 particles. The effects of chemical reactions and temperature-dependent fluid properties as well as the localized heating of the moving torch are included. In the MCVD process, the incorporation of GeO{sub}2 is low due to unfavorable equilibrium of GeCl{sub}4 oxidation reaction in the presence of SiCl{sub}4 at high temperatures. The kinetics of this reversible GeCl{sub}4 oxidation reaction is also taken into account in the current model.
机译:多组分期间的传热和传质的数值模拟(SIO {子} 2和GEO {子} 2)改进的化学气相沉积(MCVD)工艺与应用到制造光纤预制件的情况下进行。 MCVD工艺被广泛地用于制造高品质的光纤制造玻璃预制件。在这个过程中,石英管被旋转在车床上,并通过缓慢地穿过氧 - 氢焰炬加热。气体,如的混合物的SiCl {子} 4,GeCl {子} 4和O {子} 02,流入旋转管和被加热到高温,如果SiO {子} 2和GEO {子} 2个颗粒形成并沉积在管壁上,由于热泳。通常,的GeO {子} 2被用作用于增加最终光纤的折射率的掺杂剂。在这项研究中,商业计算流体动力学(CFD)包,FLUENT,基于有限体积方法中,用来解决质量,动量,能量和物种保护控制方程用于气体和SiO {子}的运输2和GEO {子} 2个颗粒。化学反应和依赖于温度的流体性质以及移动焊炬的局部加热的效果也包括在内。在MCVD过程中,的GeO {子} 2的掺入是GeCl {子}中的SiCl {子} 4在高温下存在4氧化反应的不利的平衡低所致。这个可逆GeCl {子} 4氧化反应的动力学也考虑到在当前模型。

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