Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy

摘要

We have grown InAs quantum structures by droplet hetero-epitaxy on InP nanopyramids and investigated their luminescence properties. The nanopyramids with improved size control are formed successfully by selective-area flow rate modulation epitaxy (FME). In photoluminescence (PL) measurements at 4.2 K, characteristic luminescence due to InAs quantum structures is observed clearly, depending slightly on TMIn supply time for InAs growth. We have also compared the luminescence in the samples with differently patterned areas.