Spurious microwave frequency range resonance in PZT/silicon FRAM-like devices written and read with a nanolithography process

摘要

Ferroelectric domains in thin films deposited on a silicon or glass substrate are realized using a modified AFM apparatus, also capable of implementing a so-called "piezoresponse" working mode to access the corresponding polarization distribution. Definition and control of complicated 2D patterns are performed on PZT/Ti-Pt/Si samples obtained by a sol-gel technique. The analysis of possible parasitic effects due to acoustic propagation is presented in a simplified 2D configuration. Theoretical calculations are performed using a home-made finite elements model. Frequencies at which spurious response may arise are defined for a standard structure.