This paper investigated LiNbO/sub 3/ thin films grown directly on p-type Si [100] substrates by 13.56 MHz RF magnetron sputtering system for a single transistor FRAM application. Thin film LiNbO/sub 3/ showed improved characteristics of a low interface trap density, low interaction with Si substrate, and large remanent polarization. Low temperature film growth and post RTA treatments improved the leakage current of the films while keeping other properties almost the same as high substrate temperature grown samples. We learned that the RTA annealed films were changed from amorphous to multicrystalline LiNbO/sub 3/ with [012], [015], [022], and [023] planes. P-E characteristics were studied in conjunction with C-V properties of MFS capacitors. This paper reports the LiNbO/sub 3/ film with the following parameters dielectric constant of /spl epsiv//sub r/=27.9, remanent polarization 2P/sub r/=2.7/spl mu/C/cm/sup 2/, and coercive field E/sub c/=170kV/cm.
展开▼
机译：本文将直接在P型Si [100]基板上直接生长的LiNBO / Sub 3 /薄膜，以13.56MHz RF磁控溅射系统，用于单晶硅溅射系统。薄膜LINBO / SUB 3 /显示出低界面捕集密度的改进特性，与SI衬底的低相互作用，以及大的再现极化。低温膜生长和洗涤后处理改善了薄膜的漏电流，同时保持其他特性与高衬底温度种植样品几乎相同。我们了解到，RTA退火薄膜从无定形的多晶硅LiNBO / sub 3 / [015]，[022]和[023]平面。与MFS电容器的C-V特性一起研究了P-E特性。本文报告了LINBO / SUB 3 /薄膜，具有以下参数/ SPL EPSIV //子R / = 27.9的介电常数，结垢极化2p / sub r / = 2.7 / spl mu / c / cm / sup 2 /，矫顽场E / SUB C / = 170kV / cm。
展开▼
