Over-l-/spl mu/m-thick PbZr/sub 0.52/Ti/sub 0.48/O/sub 3/ (PZT) thick films with different film density were prepared on Pt/Ti/SiO/sub 2//Si substrates by means of chemical solution deposition (CSD). Stable propylene-glycol-based sol-gel solutions were used as the chemical solutions. We evaluated the microstructure, crystal orientation, leakage current density, ferroelectric properties and longitudinal strain properties of the films. The following results were obtained. With decreasing film density, the crystal form varied from columnar to granular, the crystal orientation changed from [111]-preferred to random, the leakage current density increased and the remanent polarization decreased. However the electrically induced strain hardly varied.
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机译：在Pt / Ti / SiO / Sub 2 // Si衬底上制备具有不同膜密度的具有不同膜密度的L- / SPL MU / M厚的PBZR / SUB 0.52 / TI / SUB 0.48 / O / SUB 3 /（PZT）厚膜通过化学溶液沉积（CSD）。使用稳定的丙烯 - 二醇的溶胶 - 凝胶溶液作为化学溶液。我们评估了薄膜的微观结构，晶体取向，漏电流密度，铁电性能和纵向应变性质。获得了以下结果。随着膜密度的降低，晶体形式从柱状变化为粒状，晶体取向从[111]变为 - 漏光到随机，漏电流密度增加，倒置极化降低。然而，电诱导的应变几乎不变。
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