Effect of hydrogen on (Pb,La)(Zr,Ti)O/sub 3/ (PLZT) thin film capacitors with Pt or Ir-based top electrodes

摘要

The degradation behavior of polarization and leakage current characteristics of sol-gel-derived PLZF thin films, with Pt and IrO/sub 2/ top electrodes, by annealing under a 4% H/sub 2//96% N/sub 2/ atmosphere are investigated. The leakage current behaviors of Pt/PLZT/Pt and IrO/sub 2//PLZr/Pt capacitors annealed at 300/spl deg/C for 20 min in 4% H/sub 2/ are consistent with a proposed space-charge influenced injection model. However, IrO/sub 2//PLZT/Pt capacitors recovered at 700/spl deg/C for 10 min in Ar ambient after hydrogen annealing are not consistent with the proposed model because a conducting phase of IrPb is formed between the top electrode and PLZT during recovery annealing at 700/spl deg/C in Ar ambient. The P-E loops of Pt/PLZT/Pt capacitors show good recovery through recovery annealing after H/sub 2/ treatment. However, the IrO/sub 2//PLZT/Pt capacitors depend on the recovery annealing atmosphere (Ar or O/sub 2/).