Barrier-Controlled Transport in Highly Doped Microcrystalline Silicon: Role of Interface States

摘要

The influence of doping and temperature on the transport properties of highly P-doped rnicrocrystalline Si is investigated. A detailed analysis of electron spin resonance experiments suggests the presence of localized states near the conduction band edge. The relation of these states to charged interface traps causing potential barriers observed in Hall effect measurements is discussed. Results of numerical simulations using a simple theoretical model show the influence of the interface state distribution on the potential barriers. They also indicate that barrier values experimentally determined from Hall effect data are effective values only.