A 90nm 512Kb embedded Phase-Change Memory macro with fast read access time for digital multimedia broadcasting applications

摘要

This paper presents an embedded Phase-Change Memory (ePCM) macro with 10ns fast read access time. The ePCM macro achieves a fast read access time by introducing a novel pre-charge technique, differential array configuration, and fast sensing technique. The ePCM macro is realized in a 1mm2 silicon area where a 90nm CMOS technology is used.