A unified compact model for emerging DG FinFETs and GAA nanowire MOSFETs including long/short-channel and thin/thick-body effects

摘要

This paper presents the characteristics of ideal double-gate/gate-all-around (DG/GAA) MOSFETs, including the long/short-channel and thin/thick-body effects. A unified compact model (Xsim) based on the unified regional modeling (URM) approach for the generic DG/GAA MOSFET is used to demonstrate the expected behaviors, which should be included in the core model describing such emerging devices.