The investigation is devoted to mathematical modeling of transient processes during the Ga_(0.8)In_(0.2)Sb crystal growth in the Axial Heating Process close to the melt-crystal interface (AHP method). The numerical research of effect of boundary and initial conditions, as well as velocity of crucible moving on composition of the grown single crystal is carried out. It is found out that the growth of the single crystal of Ga_(0.8)In_(0.2)Sb with composition by volume varying no more than one percent is possible. It is found that the oscillations of the crystal growth rate can arise in the process.
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