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Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW

机译：室温连续波通过化学梁外延生长的Gainnas / GaAs VCSELS，输出功率超过1 MW

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摘要

We fabricated a 1200 nm range GaInNAs/GaAs quantum wells vertical cavity surface emitting laser grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a record low threshold current density of 2.6 kA/cm/sup 2/.

机译：我们制造了由化学束外延生长的1200nm范围的Gainnas / GaAs量子阱垂直腔表面发射激光。房间温度连续波操作已经证明了2.6ka / cm / sup 2 /的记录低阈值电流密度。

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《Pacific Rim Conference on Lasers and Electro-Optics》|2001年||共2页
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Makino S.; Miyamoto T.; Kageyarna T.; Ikenaga Y.; Nishiyama N.; Matsutani A.; Koyama F.; Iga K.;
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中图分类 TN2-53;
关键词
gallium arsenide; output p; room temperature continuous-wave operation; chemical beam epitaxy; GaInNAs/GaAs VCSELs; III-V semiconductors; current density; chemical beam epitaxial growth; surface emitting lasers; quantum well lasers; indium compounds;

机译：砷化镓;输出P;室温连续波操作;化学束外延;GAINNAS / GAAS VCSELS;III-V半导体;电流密度;化学束外延生长;表面发射激光;量子阱激光;铟化合物;铟化合物;

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专利

1. Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy [J] . Sun ZZ, Yoon SF, Yew KC, Applied Physics Letters . 2004,第9期

机译：固体源分子束外延生长具有GaAsN势垒的GaInNAs / GaAs量子点激光器的室温连续波操作
2. High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy [J] . Kageyama T., Miyamoto T. IEEE Photonics Technology Letters . 2000,第1期

机译：通过化学束外延生长的GaInNAs-GaAs量子阱激光器的高温操作高达170 / spl deg / C
3. Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy [J] . Ng TK, Yoon SF, Loke WK, Journal of Crystal Growth . 2004,第3a4期

机译：固体源分子束外延生长的GaInNAs / GaAs量子阱的温度异常的光致发光特性
4. Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW [C] . Makino, S., Miyamoto, . 2001

机译：通过化学束外延生长的GaInNAs / GaAs VCSEL的室温连续波操作，输出功率超过1mW
5. Electrical characterization of nonstoichiometric GaAs grown at low temperature by molecular beam epitaxy. [D] . Ibbetson, James Paul. 1997

机译：分子束外延在低温下生长的非化学计量砷化镓的电学表征。
6. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation [O] . SF Yoon, CY Liu, ZZ Sun, 2006

机译：自组装GaInNAs / GaAsN量子点激光器：固体源分子束外延生长和高温操作
7. Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy [O] . Sun Z. Z., Yoon Soon Fatt, Yew K. C., 2005

机译：具有GaasN势垒的GaInNas / Gaas量子点激光器的室温连续波操作，固态分子束外延生长

Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW

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