Active wave interaction in a distributed semiconductor structure

摘要

The advances in developing modem microwave devices are associated with the design of functional systems implementing a variety of wave phenomena (both at the surface and in the bulk) occurring in semiconductor structures, especially taking into account progress in modem precision technologies. A large number of papers deal with the problems of manufacturing active devices based on the long-range (prolonged) interaction of drifting charge carriers in semiconductors with fields generated by structures [l-4].