Laplace transform photoinduced transient spectroscopy: new powerful tool for defect characterization in semi-insulating materials

摘要

For the first time Laplace transform deep level transient spectroscopy is presented as a powerful tool for investigation of defect centers in high-resistivity materials. The potentialities of the new method are exemplified by the characterization of defect centers in high-resistivity neutron irradiated silicon and semi-insulating Inp.