Influence of CMOS-circuit ares on FR-damping of gold and aluminium microstripline in combined SIMMWIC -CMOS technology

摘要

At frequencies in the mm-wave region losses in metallic conductors of microstriplines are known to be exceeding substrate losses if higly resistive silicon(in this case 100 oriented, FZ p-type, 5-7k#OMEGA#cm) is used. It is thus necessary to preserve the high substrate resistivity in the proximity of the striplines during all processing steps. Future SIMMWIC-CMOS circuits, such as a RF-front ends with accompanying signal processing will require the proximity of waveguiding structures such as microstriplines and CMOS areas. The required minimum lateral separation between a microstriline and highly doped surface areas is determined to be approximately equal to the substrate height.