New Anti-Punchthrough Design for Buried Channel Pmosfet

摘要

New anti-punchthrough structure, double arsenic punchthrough stopper(DAPS), is proposed and compared another structures in buried channel (BC) pMOSFET. It is found that BC pMOSFET using the DAPS achieves good short channel effect and high current drivability as well as low off-state leakage current without any degradation in junction capacitance and body factor. Therefore the proposed DAPS structure is useful for realizing deep submicron BC pMOSFET with high performance and process simplicity.