Fast deposition of μc-Si:H films from Ar-diluted SiH{sub}4 plasma in RF glow discharge

摘要

Using Ar as diluent for SiH{sub}4 in RF glow discharge, we obtained undoped and doped μc-Si:H films having high σ{sub}D, low △E and low α; exhibiting sharp crystallographic rings in the electron diffraction pattern, c-Si grains of 100A diameter in the micrograph and intense Raman peak around 520 cm{sup}-1. The films were prepared at a remarkably high deposition rate of 50-70 A/min contributed from SiH{sub}4 having a flow rate of 1 SCCM, and hence it provides enormous promise towards an economic throughput in the fabrication of devices using this material.