Simulation on the Effects of Concave Corner on the Characteristics of Deep-Sub-Micron Grooved-Gate PMOSFET's

摘要

To improve the performance and reliability of Grooved Gate MOSFET's, The effects of Concave corner on characteristics of deep Sub-Micron grooved gate PMOSFET's is studied using device simulator MEDICI. The study results indicate that the concave corner of recessed gate influences device characteristics strongly. With increase of concave corner, threshold voltage increases, current drive capability becomes great and hot-carrier effect is decreased.