首页> 外文会议>European conference on applied superconductivity >Dependence of the gap parameter on the number of CuO_2 layers in a unit cell of optimally doped BSCCO, TBCCO, HBCCo and HSCCO
【24h】

Dependence of the gap parameter on the number of CuO_2 layers in a unit cell of optimally doped BSCCO, TBCCO, HBCCo and HSCCO

机译:间隙参数对最佳掺杂BSCCO,TBCCO,HBCCO和HSCCO的单位单元中CUO_2层数的依赖性

获取原文

摘要

We have measured the superconducting gap DELTAs in optimally doped samples of Bi_2Sr_2Ca_n-1Cu_nO_2n+4, Tl_2Ba_2Ca_n-1Cu_nO_2n+4, HgBa_2Cu_nO_2n+2 and HgSr_2Ca_2Cu_3O_8 by Andreev and tunnelling spectroscopy and by ARPES. We have found that the low-temperature value of DELTAs within experimetnal errors is linearly increasing with the number n of CuO_2 layers in the unit cell of the investigated HTSC-families (n<=3). The variation of the critical temperature Tc max with n does not obey this simple relation. For a given n the values of DELTAs at T=4.2 K for the Tl- and Hg-families practically conicide but systematically exceed that in the Bi-family.
机译:通过Andreev和隧道光谱和ARPE测量了在Bi_2SR_2CA_N-1CU_2N + 4,TL_2BA_2CA_N-1CU_NO_NO_2N + 4,HGBA_2CU_NO_2CU_NO_NO_2和HGSR_2CA_2CU_3O_8中的最佳掺杂样本中的超导间隙Δ。我们发现,在研究的HTSC-Commities的单元电池中的CuO_2层的数量n内,Deltas的低温值是线性的增加(n <= 3)。临界温度Tc max的变化Max与n不服从这种简单的关系。对于给定的N给定的Deltas的值对于TL-和HG家族实际上是基本的,但系统地超过BI家族。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号