首页> 外文会议>European conference on applied superconductivity;EUCAS 1999 >Dependence of the gap parameter on the number of CuO_2 layers in a unit cell of optimally doped BSCCO, TBCCO, HBCCo and HSCCO
【24h】

Dependence of the gap parameter on the number of CuO_2 layers in a unit cell of optimally doped BSCCO, TBCCO, HBCCo and HSCCO

机译:间隙参数对最佳掺杂BSCCO,TBCCO,HBCCo和HSCCO晶胞中CuO_2层数的依赖性

获取原文

摘要

We have measured the superconducting gap DELTAs in optimally doped samples of Bi_2Sr_2Ca_n-1Cu_nO_2n+4, Tl_2Ba_2Ca_n-1Cu_nO_2n+4, HgBa_2Cu_nO_2n+2 and HgSr_2Ca_2Cu_3O_8 by Andreev and tunnelling spectroscopy and by ARPES. We have found that the low-temperature value of DELTAs within experimetnal errors is linearly increasing with the number n of CuO_2 layers in the unit cell of the investigated HTSC-families (n<=3). The variation of the critical temperature Tc max with n does not obey this simple relation. For a given n the values of DELTAs at T=4.2 K for the Tl- and Hg-families practically conicide but systematically exceed that in the Bi-family.
机译:我们通过安德烈耶夫(Andreev)和隧穿光谱法以及ARPES方法测量了Bi_2Sr_2Ca_n-1Cu_nO_2n + 4,Tl_2Ba_2Ca_n-1Cu_nO_2n + 4,HgBa_2Cu_nO_2n + 2和HgSr_2Ca_2n_3O_8的最佳掺杂样品中的超导间隙DELTA。我们发现,在实验误差范围内,DELTA的低温值随所研究的HTSC系列的晶胞中CuO_2层数n线性增加(n <= 3)。临界温度Tc max随n的变化不遵循这种简单关系。对于给定的n,Tl和Hg家族的T = 4.2 K时的DELTA值实际上是自杀的,但系统地超过了Bi家族。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号