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STUDY OF NANOSCALE CUTTING OF MONOCRYSTALLINE SILICON USING MOLECULAR DYNAMICS SIMULATION

机译:用分子动力学模拟研究单晶硅纳米级切割

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It has been found that there is a brittle-ductile transition in nanoscale cutting of silicon when the tool cutting edge radius is reduced to nanoscale and the undeformed chip thickness is smaller than the tool edge radius. In order to better understand the mechanism of the transition, the molecular dynamics (MD) method is employed to simulate the nanoscale cutting of monocrystalline silicon. The simulated variation of the cutting forces with the tool cutting edge radius is compared with the cutting force results from experimental cutting tests and they show a good agreement. The results also indicated that there is silicon phase transformation from monocrystalline to amorphous in the chip formation zone that can be used to explain the cause of ductile mode cutting. Moreover, from the simulated stress results, the two necessary conditions of ductile mode cutting, the tool cutting edge radius is reduced to nanoscale and the undeformed chip thickness should be smaller than the tool cutting edge radius, have been explained.
机译:已经发现,当刀具切割边缘半径减小到纳米级并且未变形的芯片厚度小于工具边缘半径时,在硅纳米级切割中存在脆性 - 延展转换。为了更好地理解过渡的机制,采用分子动力学(MD)方法来模拟单晶硅的纳米级切割。将切割力与工具切割边缘半径的模拟变化与实验切削测试的切割力进行比较,并且它们表现出良好的一致性。结果还表明,芯片形成区中的单晶与无定形的硅相转化,可用于解释延性模式切割的原因。此外,从模拟应力结果,延性模式切割的两个必要条件,刀具切割边缘半径减小到纳米级,并且未变形的芯片厚度应该小于工具切割边缘半径。

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