Statistical many-dimensional simulation of VLSI technology based on response surface methodology

摘要

With increasing IC packing density IC manufacturing processes are becoming more and more complex and tolerances of process parameters more critical for production yield and product reliability, and thus the economic viability of the IC manufacturing. At the same time IC structures can no longer be treated as one-dimensional or even two-dimensional. Therefore statistical multi-dimensional simulation of IC technology accounting for fluctuations of process parameters becomes more and more important. We present preliminary results of the statistical performance of the response surface methodology applied to numerical process and device simulation for the evaluation of the influence of random process fluctuations on the device performance.