The fundamental processes that occur when SiC is implanted at elevated substrate temperatures with high doses of N+ and Al{sup}+ ions to synthesise buried layers of (SiC) {sub}x(AlN) {sub}(1-x) have been investigated. The influence of the mechanical stress induced by formed clusters of interstitials has been taken into account by adding a special term to the expression of current density of defects in the set of differential equations. The satisfactory agreement of simulation results and experimental data is obtained. The theoretical treatment has enabled one to determine the role of internal stress field on the evolution of defect distribution.
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