In this paper, two types of T-shaped bandstop filter on high-resistivity silicon in terahertz (THz) frequency range are presented. One of the proposed T-shaped filters exhibits good resonant characteristics at 0.45THz when analyzed by the Finite Integration Technique (FIT) method. And the other modified T-shaped filter shows good attenuation characteristics between 0.2THz and 0.6THz. These filters can be used in various fields such as biosensors, communications and national defense science and technology.
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