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GRAPHENE SYNTHESIS VIA ELECTROCHEMICAL EXFOLIATION OF GRAPHITE NANOPLATELETSTN AQUEOUS SULFURIC ACID

机译:石墨烯合成石墨纳米丙基硫酸水溶液的电化学剥离

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Graphene, a two-dimensional honeycomb sp2 carbon lattice has received enormous attention because of the potential for various applications such as the electrodes of photovoltaic devices and batteries, next generation flexible electronics and even antibacterial coatings [1][2]. Interest in the application of graphene is mainly due to its high electrical conductivity, flexibility and huge tuneability of the properties of graphene-based materials [3][4]. For example, the semi-metal character of pristine graphene can be changed to semiconducting [5], insulating [6] or superconducting [7] by control of size or chemical functionalization. To utilize graphene's unique properties and potential adaptability, several graphene synthesis methods have been developed. Mechanical exfoliation is the earliest technique to isolate monolayer graphene, but the yields are limited. Chemical Vapour Deposition (CVD) epitaxial growth exploits catalytic metal substrates such as Ni or Cu and can produce large area and high-quality graphene directly on the substrate, but the requirements of high temperature and the multi-step transferral process are major difficulties for cheap, industrial-scale production [4] [8]. Chemical exfoliation of graphene using Hummers' method is attractive for producing solution-processed graphene oxide (GO), but subsequent chemical or thermal treatments can only partially remove its oxygen content so that electrical properties cannot be fully restored [9][8]. Numerous other synthesis techniques have been developed to overcome these limitations, including solvent-assisted Liquid-Phase Exfoliation (LPE) [10][8] or the formation of graphite intercalation compounds [11], but extensive sonication processes are required that limit the size and yield of thin graphene flakes [4]. Furthermore, due to its low solubility, the exfoliated graphene is usually dispersed in high-boiling-point solvents, which creates difficulties for subsequent film preparation. Therefore a low-cost, solution-processable method that can lead to high-quality graphene film is desirable [4].
机译:石墨烯,二维蜂窝SP2碳晶格由于诸如光伏器件和电池的电极,下一代柔性电子和甚至抗菌涂层(甚至抗菌涂层)(甚至抗菌涂层)的主要潜力而受到巨大的关注对石墨烯的应用的兴趣主要是由于其高导电性,柔韧性和基于石墨烯的材料性能的巨大可折叠性[3] [4]。例如,通过控制尺寸或化学官能化,可以将原始石墨烯的半金属特性改变为半导体[5],绝缘[6]或超导[7]。利用石墨烯的独特性质和潜在适应性,已经开发了几种石墨烯合成方法。机械剥离是分离单层石墨烯的最早技术,但产率有限。化学气相沉积(CVD)外延生长利用催化金属基材如Ni或Cu,可以直接在基板上产生大面积和高质量的石墨烯,但高温和多步传递过程的要求是廉价的主要困难,工业规模生产[4] [8]。利用悍马方法的石墨烯的化学剥离是制备溶液加工的石墨烯氧化物(GO)的吸引力,但随后的化学或热处理只能部分地除去其氧含量,从而不能完全恢复电性能[9] [8]。已经开发了许多其他合成技术以克服这些限制,包括溶剂辅助液相剥离(LPE)[10] [8]或石墨插层化合物的形成[11],但需要广泛的超声处理过程,限制尺寸薄石墨烯片的产量[4]。此外,由于其低溶解度,剥落的石墨烯通常分散在高沸点溶剂中,这为随后的薄膜制备产生困难。因此,希望能够导致高质量的石墨烯薄膜的低成本,解决方法[4]。

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