Transient current testing of 0.25 μm CMOS devices

摘要

Transient current testing (I{sub}(DDT)) has been often cited as an alternative and/or supplement to I{sub}(DDQ) testing. The effectiveness of our I{sub}(DDT) test method is compared with I{sub}(DDQ) as well as with SA-based voltage testing fordevices produced in 0.25μm technology. For these devices a large vector-to-vector spread in I{sub}(DDT) is observed. This spread is investigated together with the die-to-die spread to determine a pass/fail criterion. The vector-to-vector spread iscompensated by comparing the measured I{sub}(DDT) values with those of a known good (golden) device. A hardware solution for an I{sub}(DDT) monitor is presented which includes a correction for the golden device signature. Therefore real-time I{sub}(DDT)testing on a digital tester without data-processing becomes feasible.