首页> 外文会议>Electronics Division Meeting of the Ceramic Society of Japan >Synthesis of Ruddlesden-Popper Type (La, Sr)_(n+1)V_nO_(3n+1)(n=1,2,3)
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Synthesis of Ruddlesden-Popper Type (La, Sr)_(n+1)V_nO_(3n+1)(n=1,2,3)

机译:Ruddlesden-popper型(La,Sr)_(n + 1)v_no_(3n + 1)(n = 1,2,3)的合成

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摘要

Perovskite-related layer compounds which consist of n units of the perovskite layers and a rock salt layer were prepared for n=1 and 3 in the system of (La, Sr)_(n+1)V_nO_(3n+1). Oxygen deficiency (#delta#) of LaSr_3V_3O_(10-#delta#) was determined to be 0.08 from a weight gain after the oxidation process. Lattice parameter of a- and c-axes of La_xSr_(4-x)V_3O_(10) (1<=x<=3) increased, respectively, from 0.3841 to 0.3896 nm for the a-axis and from 2.787 to 2.870 nm for the c-axis with a increase of x. Electric conductivity of the single layered compound, LaSrVO_4, was a semiconducting with #sigma#(RT)=3.37 S/cm. The triple layered compound, LaSr_3V_3O_(10-#delta#), exhibited a metallic conductivity with #delta#(RT)=93.7 S/cm, while highly doped LaSr_3V_3O_(10-#delta#) was a semiconducting. The electric conductivity #sigma#(RT) of La_xSr_(4-x)V_3O_(10) (1<=x<=3) decreased with increase of dopant concentrations.
机译:在(LA,SR)_(N + 1)V_NO_(3N + 1)的系统中,制备由钙钛矿层的N单位组成的钙钛矿相关层化合物和岩盐层的N = 1和3。在氧化过程之后,确定LASR_3V_3O_(10-#DELTA#)的氧气缺陷(10-#delta#)的氧气缺陷(10-#delta#)是0.08。 La_xsr_(4-x)v_3O_(10)(1 <= x <= 3)的A-和C轴的晶格参数分别为A轴的0.3841至0.3896nm,为2.787至2.870 nm C轴随着x的增加。单层化合物的电导率Lasrvo_4,具有#sigma#(Rt)= 3.37 s / cm的半导体。三层化合物LASR_3V_3O_(10-#delta#),展示了与#delta#(rt)= 93.7 s / cm的金属导电率,而高度掺杂的lasr_3v_3o_(10-#delta#)是一个半导体。 La_xsr_(4-x)v_3O_(10)(1 <= x <= 3)的电导率#sigma#(Rt)随着掺杂剂浓度的增加而降低。

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