Oxide charge modeling with CEA-TRAPPOX code version 4. comparison of trapping models on desktop computer

摘要

The charge trapped in oxides depends on a large number of parameters (spatial and energetic distributions of traps, voltage and dose-rate profiles, internal space-charge effect, etc.). We demonstrate that 1D simulations with personal computers can be effective in extracting oxide parameters from experimental data, thus enabling prediction of MOS degradation in various mission profiles.