As of recently the use of thin-film transistors (TFTs) have proliferated in both the integrated circuit (IC) and display industries. Although TFTs offer several advantages over conventional bulk metal-oxide-semiconductor field-effect transistors (MOSFETs), TFTs still suffer from problems that are also observed in comparable bulk devices; one of which is gate-induced drain leakage (GIDL). This study focuses on GIDL, which occurs due to band-to-band tunneling at the drain end of the transistor. Depending on bias conditions, GIDL can cause a current increase by multiple orders of magnitude in the off-state. With TFTs being used in many mobile (low-power) applications the off-state leakage current becomes very important. A high GIDL current can increase power consumption and reduce battery life.
展开▼
