Ellipsometry as a thin-film measurement technique has wide-spread use in the semiconductor and microelectronics industries as a quick and precise measurement technique for process characterization and control. (1) It is also widely used as a research and development technique, in characterization of optical properties of thin films and substrate materials. The trend in display backplane thin-film-transistor technology has been moving toward increased functionality integration, lower power usage, and increased device uniformity. Corning Incorporated has been working on development of a new substrate material employing monocrystalline silicon on EAGLE glass (2). Crystalline silicon offers improvements in carrier mobility and device uniformity, enabling greater on-panel circuit integration (3). This work focuses on an optical characterization technique used to measure the thicknesses and properties of the 5 layer SiOG substrate, shown schematically in Figure 1, as part of a larger collaborative effort between Corning and the Rochester Institute of Technology (RIT), Rochester, NY (4).
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