Reducing Ni residues of Metal Induced Crystallization Poly-Si with a Simple Chemical Oxide Layer

摘要

Low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) have attracted considerable interest for their use in active-matrix liquid crystal displays (AMLCD). For commercial manufacturing, Ni-metal-induced crystallization (MIC) is optimum technology of LTPS due to low cost, large area, low temperature (～500 ) and short time for crystallization (0.5 - 5 h). However, Ni and NiSi_2 residues are easy to increase the leakage current and shift the threshold voltage [l]-[2]. Recently, several studies have demonstrated the reducing of Ni contamination; however, the on current of poly-Si films decreased [3].