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LRM: A quantitative look at reference impedance contradictions and other uncertainty impacts

机译:LRM:定量外观参考阻抗矛盾和其他不确定性影响

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摘要

LRM and its derivatives have been popular VNA calibration techniques, particularly on-wafer, for many years. The quantitative effects of standards problems (line impedance issues, match issues, reflect asymmetries) have not always been well-understood including the cases where the standards present internal contradictions to the calibration. These effects will be studied here through the use of constructed measurements and simulations based on a parameter space consistent with commercial VNAs and common test situations.
机译:LRM及其衍生物一直是VNA校准技术,特别是晶圆多年来。标准问题的定量影响(线阻抗问题,匹配问题,反映不对称)并不总是很好地理解,包括标准对校准的内部矛盾的情况。这里将通过使用基于与商业VNA和常见测试情况一致的参数空间的构造测量和模拟来研究这些效果。

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