This paper synthesizes the authors' main results in the domain of the analog behavioral macromodeling of power semiconductor devices, and proposes further methods to enhance the simulation accuracy by considering the high current effects, the nonlinear interelectrode capacitances, the self-heating and the breakdown effects. The behavioral macromodels have a modular structure, each characteristic being described with a distinct set of parameters. This leads to a very simple algorithm of parameters extraction and gives an easy way to adapt the macromodel's complexity to the desired accuracy. Several methods to enhance the convergence and speed-up the simulation have also been proposed. The method was exemplified on the power MOSFET and the IGBT and the simulation results are compared with those of existing intrinsic and structural models, showing better agreement with experimental measurements.
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