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New concepts of texture ananlysis and their contirbution to our understanding of materials properties

机译:纹理分析的新概念及其对我们对材料特性理解的贡献

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The texture of a polycrystalline material, in the classical sense, is defined by the orientation distribution function f(g) of the crystallites irrespective of their local arrangement. The new concept of texture considers crystal orientation g(x) as a function of location x in the material. Additionally, also the substructure (lattice defects) may be considered as a function s(x) of location. Several integrals over the aggregate function called generalized textural quantities have also been used. The classical texture function f(g) can be obtained from pole figures measured with a texture goniometer and followed by mathematical pole figure inversion. More advanced experimental equipment uses one-dimensional position sensitive detectors, area detectors, parallel beam technique or location resolved texture measurement. The greatest step forward was, however, achieved by automated orientation-location scanning on the basis of Kikuchi diagrams. This technique yields a two-dimensional section of the aggregate function g(x). Model calculations of physical properties of polycrystalline materials show that the classical texture f(g) defines only the Voigt and Reuss bounds which deviate up to 25percent from each other. In order to reach a higher accuracy the aggregate function g(x) must be used. This can be done in terms of the "Cluster Model" containing approx 1000 crystals. Using this model it was shown that grain shape, grain packing, and orientation correlation have a definite influence on the properties of polycrystals. By particular choices of g(x) the whole range between the Voigt-Reuss bounds can be reached.
机译:在经典意义上,多晶材料的质地由微晶的定向分布函数F(g)限定,而不管其局部排列如何。纹理的新概念将晶体定向g(x)视为材料中位置x的函数。另外,还可以将子结构(晶格缺陷)视为位置的函数s(x)。还使用了几种在称为广义纹理量的聚集功能上的多个积分。经典纹理函数f(g)可以从用纹理测筒仪测量的杆图获得,然后是数学极点图反转。更先进的实验设备使用一维位置敏感探测器,区域探测器,并联光束技术或位置解决纹理测量。然而,通过基于Kikuchi图来实现最大的一步是通过自动化定位扫描来实现的。该技术产生了聚合函数G(x)的二维部分。多晶材料物理性质的模型计算表明,经典纹理F(g)仅定义VoIgt和Reuss界限,彼此偏离最高25平方。为了达到更高的精度,必须使用聚合函数g(x)。这可以根据包含大约1000个晶体的“集群模型”来完成。使用该模型显示,晶粒形状,颗粒包装和取向相关性对多晶体的性质具有明确的影响。通过G(x)的特定选择可以达到Voigt-Reuss边界之间的整个范围。

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